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Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
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Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D1CP02012A
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Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D1CP02012A
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